Neu-MOS (vMOS) for Smart Sensors and Extension to a Novel Neu-GaAs (vGaAs) Paradigm - Electronics, Circuits and Systems, 1998 IEEE International Conference on
نویسندگان
چکیده
The neu-MOS (vMOS) transistor is a new device that enables the design of conventional digital and analog circuits, in standard CMOS, with a factor of 5-10 decrease gate count. Furthermore, vMOS circuit characteristics are insensitive to transistor parameter variations but instead rely on coupling capacitor ratios. In this paper, we demonstrate this principle with results from fabricated controlled gain amplifiers. This new technology is ideal for smart sensors where a high functionality per pixel area and good matching between pixels is required. Moreover, we discuss the advantages of smart sensors in GaAs technology and the viability of developing a vGaAs paradigm.
منابع مشابه
Pii: S0026-2692(00)00032-x
The neuron-MOS (neu-MOS) transistor, recently discovered by Shibata and Ohmi in 1991 [T. Shibata, T. Ohmi, International Electron Devices Meeting, Technical Digest, 1991] uses capacitively coupled inputs onto a floating gate. Neu-MOS enables the design of conventional analog and digital integrated circuits with a significant reduction in transistor count [L.S.Y. Wong, C.Y. Kwok, G.A. Rigby, in:...
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تاریخ انتشار 2004